Semiconductor diode detectors coated with neutron reactive materials are generally fashioned as planar diodes coated with 10 B, 6 LiF, or Gd. Planar detectors coated with 10 B or 6 LiF are limited to less than 5% intrinsic thermal neutron detection efficiency. Detectors coated with Gd can achieve higher efficiencies, but the low-energy signatures are problematic in the presence of background radiations.
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