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In bilayers of ferromagnets and heavy metals, which form the so-called spintronic emitters, the phenomena of ultrafast demagnetization and the inverse spin Hall effect (ISHE) conspire to yield remarkably efficient emission of electric pulses in the THz band. Light-induced demagnetization of the ferromagnet launches a pulse of spin current into the heavy metal, wherein it bifurcates into a radiative charge transient due to the ISHE. The influence of temperature on this combined effect should depend on both the magnetic phase diagram and the microscopic origin of spin Hall conductivity, but its exact dependence remains to be clarified. Here, we experimentally study the temperature dependence of an archetypal spintronic emitter, the Co/Pt bilayer, using electro-optic sampling of the emitted THz pulses in the time domain. The emission amplitude is attenuated with decreasing temperature, consistent with an inverse spin Hall effect in platinum of predominantly intrinsic origin.

Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as the Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all the materials known to date, the BC is triggered by the hybridization of a single type of quantum number. Here we report the discovery of the first material system having both spin- and orbital-sourced BC: LaAlO3/SrTiO3 interfaces grown along the [111] direction. We independently detect these two sources and probe the BC associated to the spin quantum number through the measurements of an anomalous planar Hall effect. The observation of a nonlinear Hall effect with time-reversal symmetry signals large orbital-mediated BC dipoles. The coexistence of different forms of BC enables the combination of spintronic and optoelectronic functionalities in a single material.

In particular, free-standing thin film bulk acoustic resonators (FBARs) have been widely adopted as the filter technology of choice for 5G bands. FBAR filters are composed of a thin film of a piezoelectric material sandwiched between electrodes in a capacitor geometry that is suspended over a cavity. The thickness of state-of-the-art FBAR filters needs to be reduced to meet the requirements posed by increasing telecom communication frequencies, since resonance frequencies are inversely proportional to thickness. However, scaling down current device geometries is challenging, both because of the complexity of manufacturing such ultrathin suspended heterostructures, but also since the piezoelectric performance [2,3] and breakdown voltage of polycrystalline ceramics diminishes. [4,5] Moreover, realizing uniform electrodes of nanometer-thickness with sufficiently high conductivity and low mass becomes increasingly difficult.Here, we investigate free-standing crystalline complex oxides as an alternative material platform that can mitigate some of the aforementioned drawbacks and enable resonant filters with improved performances. Single crystals are known to have larger dielectric breakdown voltages compared to their polycrystalline counterparts [6] while materials like BTO and PbZr x Ti 1−x O 3 (PZT) provide higher piezoelectric coefficients than commonly used AlN, and can thus handle higher voltages and power densities in the thin film form. Furthermore, single-crystal complex oxides in their ultrathin free-standing form are mechanically robust [7] withstanding large strains up to 8%, [8][9][10] are flexible enough to allow large curvatures [11] and have already been demonstrated as viable nanomechanical resonators. [12][13][14] Simultaneously, the electrodes, which also need to be scaled down, must be able to support high-GHz frequencies for 5G and 6G applications. In this regard, graphene is an ideal electrode material. Graphene conducts electricity down to the single atomic layer, [15] has ultra high mobilities, [16,17] is mechanically strong, [18,19] is able to withstand large strains [20] and has been demonstrated to support upto 300 GHz operating frequencies. [21] As a result of this, the use of graphene in various nano-electromechanical systems (NEMS) applications has been widely explored. [22][23][24][25][26][27][28][29] For Suspended piezoelectric thin films are key elements enabling high-frequency filtering in telecommunication devices. To meet the requirements of nextgeneration electronics, it is essential to reduce device thickness for reaching higher resonance frequencies. Here, the high-quality mechanical and electrical properties of graphene electrodes are combined with the strong piezoelectric performance of the free-standing complex oxide, BaTiO 3 (BTO), to create ultrathin piezoelectric resonators. It is demonstrated that the device can be brought into mechanical resonance by piezoelectric actuation. By sweeping the DC bias voltage on the top graphene electrode, the BTO membrane is switched between...

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