A new feedback current programming architecture is described that is compatible with AMOLED displays having the 2T1C pixel structure. The new pixel programming approach is compatible with all TFT technologies and can compensate for non‐uniformities in both threshold voltage and carrier mobility of the pixel OLED drive TFT. Based on circuit simulations a pixel drive current of less than 10nA can be programmed in less than 50μsec. This new approach can be implemented within an AMOLED external or integrated display data driver.

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High performance thin film transistor (TFT) arrays and circuits on engineered aluminum substrates are reported. Aluminum substrates were engineered to have a smooth insulating surface suitable for device fabrication upon them. Amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors with an average field effect mobility of about 10 cm 2 /Vs, threshold voltage of 5 V, gate leakage current of 10 -13 and on/off current ratio of 10 8 are demonstrated. Metal oxide transistors and circuits built on aluminum substrates open a route for future applications in large area flexible electronics.