Abstract-By using a quantum kinetic equation for electrons interacting with an optical phonon, an analytic expression is obtained for the Ettingshausen coefficient (EC) in quantum wells with parabolic potential (QWPP) under the influence of laser radiation. The dependence of EC on frequency, amplitude of laser radiation, quantum wells parameters and temperature gradient is studied. The theoretical results are numerically calculated, plotted and discussed for GaAs/GaAsAl quantum well. Especially, when we study the dependence of EC on temperature, we realize that the EC in QWPP is 10 2 times bigger than that in bulk semiconductors.