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Starch is available in large quantities and at cheap price, especially that from stale rice, root and tuber crops, etc. A metal-free approach to convert starch to 5-methylfurfural using HCl, NaI and H2 in a biphasic solvent system has been developed.

In this study, we present a bilayer resistive switching memory device with Pt/Ta2O5/HfO2-x/Hf structure, which shows sub-1 μA ultralow operating current, median switching voltage, adequate ON/OFF ratio, and simultaneously containing excellent self-rectifying characteristics. The control sample with single HfO2-x structure shows bidirectional memory switching properties with symmetrical I–V curve in low resistance state. After introducing a 28-nm-thick Ta2O5 layer on HfO2-x layer, self-rectifying phenomena appeared, with a maximum self-rectifying ratio (RR) of ~4 × 103 observed at ±0.5 V. Apart from being a series resistance for the cell, the Ta2O5 rectifying layer also served as an oxygen reservoir which remains intact during the whole switching cycle.

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