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We realized a monolithic dual-polarization dual-quadrature coherent receiver with balanced detection on InP using a single epitaxial step. It monolithically integrates the polarization splitters, 90 hybrids, and balanced photodiodes in 4.1 mm . We demonstrate reception of 112-Gb/s polarization-division-multiplexed quadrature phase-shift keying with 17.3-dB optical signal-to-noise ratio at bit-error rate.

Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost silicon photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers and lasers are typically realized in III-V waveguide structures, it is beneficial to have an integration approach which allows flexible and efficient coupling of light between III-V gain media and silicon waveguides. In this paper, we propose and demonstrate a novel fabrication technique and associated transition structure to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses. This technique employs epitaxial growth of silicon in a pre-defined trench with taper structures. We fabricate and demonstrate a long-cavity hybrid laser with a narrow linewidth of 130 kHz and an output power of 1.5 mW using the proposed technique.

A great deal of attention has been recently focused on Electrochromic (EC) materials and EC based devices, promoting mainly applications related to display technology. In this case, EC based displays are usually actuated by the application of low dc bias voltages, changing their appearance from transparent to opaque. A variety of studies related to the optical characteristics of EC materials have been reported, however, no serious studies so far have been reported on the possible high frequency tunability of the dielectric characteristics of these materials, with the exception of the work by Rose, which presented the operation of a microwave shutter based on conductive polymers operating in the X-band. Here we report tuneable high frequency dielectric characteristics of an Electrochromic (EC) cell with a complimentary structure of Conductor/WO3/LiNbO3/NiO/Conductor in the frequency range from 1 GHz to 20 GHz. The EC cell was prepared using standard semiconductor processing technology, such as lithography, etch and deposition techniques. Our measured results indicate that tunability of high frequency dielectric characteristics as a function of dc bias voltage is achieved, and that a possibility exists for this tunability to be tailored.

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