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This paper focuses on CI novel AI etching profile control by resist hardening approach for DUV lithography to leave enough resist and control CD with high AI sidewall quality. Excessive resist hardening causes A1 notching due to less sidewall passivation. The result shows a reasonable hardeness of resist prevents Ai notching and preserves enough resist with good CD control. Resist hardening (or hardness) is controlled by modihing bias power and CF,/Ar gas ratio.

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