No abstract

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We have studied the effect of impurity doping on the optical properties of indium phosphide (InP) nanowires. Photoluminescence measurements have been performed on individual nanowires at low temperatures (5–70 K) and at low excitation intensities (0.5–10W∕cm2). We show that the observed redshift (200 meV) and the linewidth (70 meV) of the emission of p-type InP wires are a result of a built-in electric field in the nanowires. This bandbending is induced by Fermi-level pinning at the nanowire surface. Upon increasing the excitation intensity, the typical emission from these p-InP wires blueshifts with 70meV∕decade, due to a reduction of the bandbending induced by an increase in the carrier concentration. For intrinsic and n-type nanowires, we found several impurity-related emission lines.

DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement:

This work reports on the main competing processes and their contribution to the properties of SiO2 layers on polymers in large area AP‐PE‐CVD from ArN2O2‐HMDSO mixtures. The detailed space resolved surface analysis on the statically deposited films showed smooth SiOx films in the vicinity of the gas injection, as deposited by HMDSO radicals. At the gas effluent, due to HMDSO depletion, non‐depositing species interact with the polymer and induce rough deposits with high carbon content. The competition of plasma–polymer surface interaction with HMDSO radicals deposition, is further confirmed from the analysis of films grown on polymers with a “protecting” layer and with reverse gas flow direction. Under web roll conditions, HMDSO radicals deposition is dominant, resulting in high quality SiOx layers along the whole electrode length.