A detection of the stacked integrated Sachs-Wolfe (ISW) signal in the CMB of rare superstructures identified in the SDSS Luminous Red Galaxy catalogue has been reported at very high statistical significance. The magnitude of the observed signal has previously been argued to be more than 3σ larger than the theoretical ΛCDM expectation. However, this calculation was made in the linear approximation, and relied on assumptions that may potentially have caused the ΛCDM expectation to be underestimated. Here we update the theoretical model calculation and compare it with an analysis of ISW maps obtained from N -body simulations of a ΛCDM universe. The differences between model predictions and the map analyses are found to be small and cannot explain the discrepancy with observation, which remains at > 3σ significance. We discuss the cosmological significance of this anomaly and speculate on the potential of alternative models to explain it.

Correlation between the early stage of copper metal organic chemical vapor deposition and the material properties of thin filmThe gap-filling property of Cu deposited by chemical vapor deposition was investigated in 1/4-m-wide trenches and 1/4-m-diam holes. Attention was paid to the influences on the gap-filling property of both substrate temperature and partial pressure of the source gas. At a low deposition temperature of 180°C, Cu could completely fill a hole with an aspect ratio of 7. A high deposition rate could be obtained at the high substrate temperature and high partial pressure of the source gas. However the coverage probably deteriorated because of the increase in sticking coefficient due to an increase in the reaction rate at high temperature. As the source gas pressure increased, the deposition rate increased and saturated in the high source pressure region. The good gap-filling property at high source pressures was attributed to the Langmuir-Hinshelwood reaction where almost the same deposition rate is realized from the top to the bottom of the trench. At a high temperature of 215°C, voids were observed at both the center and along the wall of the trench. The voids along the wall were assumed to be formed at the initial stage of deposition. They disappeared with an increase in source gas flow rate. Therefore, the formation of voids could be due to an insufficient supply of source gas. By annealing the Cu film, its properties of increase in grain size and the reduction in the amount of C, O, and F contaminants were improved. After annealing and chemical mechanical polishing treatment, scanning electron microscopy observation showed Cu interconnecting lines with grains larger than the wire width.

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When copper interconnection is applied in practical ULSI devices, it is required to fill holes and trenches with high aspect ratios with copper. A high deposition rate of 100 nm/min as well as complete gap filling at an aspect ratio of 3 was obtained in deposition of copper by chemical vapor deposition. We evaluated three types of CVD chamber configuration. In this work, the deposition rate and the filling property were found to be regulated by the gas velocity very near the substrate surface. High‐speed gas flow over the substrate surface can be realized with a suitable chamber configuration, which results in high deposition rate, good uniformity, and a high consumption rate of the source. © 2000 Scripta Technica, Electron Comm Jpn Pt 2, 83(6): 1–7, 2000

When copper interconnection is applied in practical ULSI devices, it is required to fill holes and trenches with high aspect ratios with copper. A high deposition rate of 100 nm/min as well as complete gap filling at an aspect ratio of 3 was obtained in deposition of copper by chemical vapor deposition. We evaluated three types of CVD chamber configuration. In this work, the deposition rate and the filling property were found to be regulated by the gas velocity very near the substrate surface. High-speed gas flow over the substrate surface can be realized with a suitable chamber configuration, which results in high deposition rate, good uniformity, and a high consumption rate of the source. © 2000 Scripta Technica, Electron Comm Jpn Pt 2, 83(6): 17, 2000