A real-time surface observation system with a channel flow double electrode was developed for analysis of initiation of corrosion pits on copper during anodic polarization. In this system, a video of the surface morphology of a working electrode (WE) is taken by an optical microscope combined with a charge-coupled device camera, and the metallic ions dissolved from the WE can be detected by arranging a detecting electrode (DE) downstream of the WE. It was confirmed that the initiation of micrometer-size pits on copper corresponded to the oscillation of dissolution current of cuprous ions.

TFT backplane process for AM‐OLED was developed by integrating a G8 compatible CW green laser annealing into conventional bottom‐gate TFT process. Novel coating channel‐etching‐stopper (CES) and contact doping processes achieved the same high TFT performance as LTPS without critically increasing extra process steps.

MgZnO films were fabricated by the molecular precursor method (MPM) for their application as UV transparent electrodes. It was clarified that annealing under suitable conditions using an Ar gas flow is effective for the realization of c‐axis‐oriented MgZnO films in the time of a pyrolysis reaction. The resistivity of the Ga‐doped Mg0.1Zn0.9O film was 2.5 × 10‐2 Ω · cm. The resistivity of the c‐axis‐oriented MgZnO films was lower than that of polycrystalline films. This is due to the reduction of the potential barrier at the boundaries of the crystallites. The spontaneous polarization affects the potential barrier. The c‐axis orientation reduces the potential barrier along the deposition plane (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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