No abstract

All high permeability GO is manufactured using AlN as the main inhibitor. Two types of inhibitor preparation of GO have been realized industrially, i.e., extra high and extra low slab reheating temperature methods. Therefore, from a purely metallurgical viewpoint, the possibility of a middle temperature slab reheating method was examined and the effect of nitriding was investigated.Metallurgically, this method is located between the Extra high and Extra low temperature methods. Furthermore, it is essential that a suitable combination of inhibitor intensity and primary diameter, controlled by nitriding and heat treatments respectively can provide sharp Goss orientation.

Fig. 15. I N , I C S1, P CN S1, I C S5 and I C S9 of {411}͗122͘, {447}͗110͘, Goss, {110}͗223͘ and dispersed Goss through the thickness.

No abstract

Mechanism of Goss secondary recrystallization in grain-oriented silicon steel has been investigated by temperature gradient annealing and by in situ observation utilizing synchrotron x-ray topography. The results support the selective growth theory. Migration of Goss grains is controlled by second phase particles (inhibitor) and sharper Goss grains, which have higher frequency of CSL boundaries to the matrix, start to grow preferentially while the other matrix grains are stagnated by inhibitor. CSL boundaries are supposed to have lower grain boundary energy, thus suffer lower pinning force from the inhibitor and start to migrate at higher inhibition level. Based on this model, we have made a computer simulation and have found that this model successfully depicts the important features of secondary recrystallization; grain growth behavior of secondary grains, secondary grain size and sharpness of Goss texture.