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Oxygen molecules doped in a low temperature N crystal were irradiated at 240-260 nm. Two emission band systems were observed, one from the v' 0 level of A' 3A state to X3E. state and the other, from the v' 0 level of cE. state to atAg state, independent on the excitation wavelength. The latter emission grew together with the decay of the former emission at around the same rate after the pulsed laser excitation, which implies that the vibrational levels of c state lying below the v' 0 level of 3 of A' state are populated from the v' 0 level of A' state, though some additional mechanism for populating the c state may exist. The rate was found to become larger with the increase of the crystal temperature. It was also found that the excitation spectrum obtained by monitoring the A'-X emission was the same as that obtained by the c-a emission. The progress of vibrational relaxation, coupling with the intersystem crossing between the Herzberg states, will be discussed.

FUNDAMENTAL CIRCUIT AND RESPONSE CHARACTERISTICS OF UNIVERSAL VOLTAGE DIVIDER A new h~.& quality universal voltage divider was developed as a result of theoretical and experimental investigations. Various Figure 1 shows a fundamental circuit of the voltage divider kinds of tests have been carried out on the divider in order to developed. Basically, this is the damped capacitive divider to which c o n f m its performance. The results show that the divider has a a resistance divider is connected in parallel for dc measurement. response time of about 10 ns and is capable of measuring voltage of various waveforms accurately from lightning impulse to dc voltage.

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