The characteristics of the GaN based Vertical Light Emitting Diodes on Metal alloyed Substrate (VLEDMS) were investigated. The VLEDMS exhibits very good current-voltage behaviour with low average dynamic resistance of 0.7 Ω and low operated voltage of 3.2 V at 350 mA. High current operation up to 2000 mA in continuous mode was demonstrated without any performance deterioration. The high thermal conductivity of metal alloyed substrate demonstrated excellent heat dissipation capability. Chip scaling without efficiency loss shows a unique property of VLEDMS and enabled to enlarge up to 2 mm × 2 mm chip size. A light output efficiency of 70 lm/W or better was achieved in single chip or multiple chips package. Coupled with mass production ability, VLEDMS is very suitable for general lighting application.

Objectives: The COVID-19 pandemic poses significant risks to the vulnerable patient population supported by community mental health (CMH) teams in South Australia. This paper describes a plan developed to understand and mitigate these risks. Methods: Public health and psychiatric literature was reviewed and clinicians in CMH teams and infectious disease were consulted. Key risks posed by COVID-19 to CMH patients were identified and mitigation plans were prepared. Results: A public health response plan for CMH teams was developed to support vulnerable individuals and respond to the COVID-19 pandemic. This plan will be reviewed regularly to respond to changes in public health recommendations, research findings and feedback from patients and clinicians. Conclusions: The strategic response plan developed to address risks to vulnerable patients from COVID-19 can assist other CMH services in managing the COVID-19 pandemic.

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We report the first detailed study of dishing effects in chemical mechanical polishing (CMP) of oxide films, observed during the development of an advanced CMP-only trench isolation process. The degree of dishing has been determined for field widths ranging from 0.3 μm to 4 mm and was found to be highly pattern geometry (field width) sensitive, increasing from ∼0 nm at a field width of 5 μm and below to 200 nm at 4 mm. Although this dishing effect makes complete planarization in a large field oxide region (on the order of 1 mm) difficult, it poses no serious problem for trench isolation in narrow field regions due to its reduced effect at small field geometries.