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Some general features of the behaviour of Cu, Zn, Bi, and Mn impurities in CdSiP2 and CdP2 crystals are studied by analyzing electron beam‐excited luminescence spectra measured in a temperature range of 6 to 300 K, as well as by determining their electrical parameters. The impurities are established to substitute mainly the cadmium in the crystalline lattice and to promote the formation of complexes of defects, which are radiative recombination centers. Cadmium vacancies as well participate in the defect complex formation processes. A radiation ascribed to interstitial cadmium‐type defects, is discovered in CdSiP2 crystals.

Íàâåäåí³ ðåçóëüòàòè äîñë³äaeåííÿ îïòè÷íèõ âëàñòèâîñòåé (øèðèíà çàáîðîíåíî¿ çîíè, ïî-êàçíèê çàëîìëåííÿ òà ñïåêòðè ïðîïóñêàííÿ ó âèäèì³é òà ³íôðà÷åðâîí³é ä³ëÿíêàõ) õàëüêîãå-í³äíèõ ñêëîâèäíèõ íàï³âïðîâ³äíèê³â As 2 S 3 , ñèíòåçîâàíèõ ð³çíèìè ìåòîäàìè.Êëþ÷îâ³ ñëîâà: õàëüêîãåí³äè As x S 100-x , òåõíîëîã³ÿ ñèíòåçó, îïòè÷í³ ïàðàìåòðè, ñïåêòðè ïðîïóñêàííÿ The results of research of optical properties (width of the energy gap, refractive index and spectrums of transmission in visible and infra-red areas) of the chalcogenides glassy semiconductors As 2 S 3 , synthesized by different methods.

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