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An investigation is made of the dependence of distributions of implanted heavy ions, with the inclusion of the channeling effect, upon the initial ion energy, the thickness of the amorphous layer on the crystal surface, the direction of target irradiation, the target temperature, the angle of orientation of the ion beam with respect to the channel axis, the type of irradiating ions, and the radiation dose. Problems of capture of ions into channels are also considered. TeopeTHsecm H3ysaIOTCH npOCTpaHCTBeHHbIe paCnpeAeneHHH KaHaJlHpOBaHHbIX IlOHOB B 3aBHCIlMOCTH OT Ha%lJlbHOfi 3HeprEIH EIOHOB, OT TOJIlrlIlHbI aMOp@HOI' O CJIOH Ha no-BePXHOCTH KpHCTaJlJla, OT HaIIpaBJleHHH o 6 n y y e~~~ MHUIeHH, OT TeMIlepaTyphI MEIUleHIl, OT yrna MeKay ocbm KaHana H HanpaBnemeM nywa, OT copTa EIOHOB, OT ~0 3~ o6ny-YeHHH. 06CyKn~ieTCH TaKxie npo6ne~a 3 a x~a~a HOHOB B HaHan. 117234 Moscow, USSR.

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Results of calculations are presented of spatial distributions of channeled ions depending on eight parameters : thickness of an amorphous target layer, initial energy, type of ions, target orientation, target temperature, angle of incidence, interaction potential in the channel, and variation dose. The results obtained are compared with experimental dat,a. B O B T O P O~ 9aCTH pa6o~bl no MeTOHHlce H3JlOWeHHOfi B IIepBOa 9aCTEl IlpElBeAeHbI pe3yJlb-TaTbI paC9eTOB IIpOCTpaHCTBeHHbIX paCIIpeAeJleHHH KaHaJlHpOBaHHbIX ElOHOB B 3aBHCH-MOCTH OT AeBRTH IlapaMeTpOB. npOBOHHTCFI CpaBHeHEle IIOJlJ'seHHbIX pe3J'JlbTaTOB C 3KC-IIepHMeHTaJlbHbIMH AaHHbIMEl.