A monosilane if-discharge plasma is investigated by numerical methods. The results of Monte Carlo calculations of the electron kinetics are compared with the results of calculations in the hydrodynamic approximation. It is shown that the hydrodynamic model works well over the entire range of parameters of a plasma-chemical reactor for the deposition of amorphous silicon films. Certain plasma parameters of importance from the standpoint of cooling, such as the dissociation frequency of monosilane and the energy and flux of ions onto the electrodes, are investigated as functions of the discharge power density and the pressure in the reactor in the hydrodynamic approximation.

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