The experimental dependence of microwave noise temperature on supplied electric power is used to study hot phonons in an InP-based modulationdoped In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As heterostructure with a two-dimensional electron gas channel (n 2D = 2.3 × 10 12 cm −2 ). The effective hot-phonon temperature is extracted for two-subband and six-subband models treated in the electron-temperature approximation. The estimated value for the hot-phonon lifetime with respect to the longitudinal optical phonon conversion into other vibration modes is (0.9 ± 0.3) ps at room temperature.

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Articles you may be interested inExperimental demonstration of hot-carrier photo-current in an InGaAs quantum well solar cell Appl. Phys. Lett.

The technique to investigate hot-electron noise in doped semiconductors at electric fields over 25 kV/cm is developed. The intervalley noise temperature at room temperature is found to saturate in GaAs at 15 000 K at fields over 100 kV/cm. From electric-field dependence of noise temperature, the intervalley scattering time of high-energy electrons from the ⌫ valley into the X valleys is estimated to be 30 fs Ͻ ⌫X Ͻ60 fs.

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