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The proximity technique (face-to-face) has been used for annealing of WSi,,, and TiSi, contacts on GaAs. This technique eliminates the need for encapsulation of GaAs or A s overpressure. The contacts were stable up to an annealing temperature of 900 ' C with little degradation of electrical properties. The Richardson constant decreased sharply at high annealing temperature which may have been d u e to creation of defects at !he interface.

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