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The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO 2 /InP heterostructures (thickness of SnO 2 layer ∼ 50 nm). It was established that SnO 2 does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO 2 provides the formation of nanoscale films with semiconductor properties.

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