Luminescence photoexcitation spectra of α-Bi 2 O 3 ceramics are investigated. Luminescence spectra were deconvoluted into fundamental components using the Alentsev-Fok method. It is established that the luminescence spectra of α-Bi 2 O 3 ceramics consist of three fundamental bands with maxima at 2.75, 2.40, and 1.97 eV. A comparison of the results with those from an investigation of luminescence of various modifications of bismuth oxide and bismuth germanates suggests that luminescence of these compounds is caused by radiation processes that occur in structural complexes that contain the bismuth ion in a nearest oxygen environment.

9 were investigated. The spectra were decomposed into elementary components by the Alentsev-Fok method. It has been established that the luminescence spectra of thin Bi 4 Ge 3 O 12 and Bi 2 Ge 3 O 9 films have a similar structure and that each contains three luminescence bands with maxima at 2.70, 2.40, and 2.05 eV and at 2.73, 2.40, and 1.95 eV, respectively. Comparison of the results obtained with the well-known results of investigation of the luminescence of Bi 12 GeO 20 and Bi 2 O 3 suggests that the luminescence in the compounds considered is caused by the radiation processes that proceed in structural complexes of similar configuration that contain the bismuth ion in the nearest oxygen environment.

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