A new pulse shape correction method combined with a pulse shape selection method has been proposed for a CdTe detectors energy resolution improving and the total absorption peak efficiency increasing. The capabilities of the new technique for the spectrometric characteristic improvement are based on the using of specific features of the CdTe detectors output pulses. The energy resolution of about 1% FWHM at 662 keV have been achieved with planar CdTe detector under room temperature without decrease of peak efficiency. Standard measurement techniques gwe 3.7% FWHM. A significant spectrometric characteristic improvement of the other room temperature semiconductor detectors such as HgIa and CdZnTe detectors was also obtained.
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