A method for growing
normalSiC
epitaxially on the (0001) plane of
6HnormalSiC
is described. The
normalSiC
is grown from the vapor phase by the reaction of hydrogen with silicon and carbon tetrachlorides. Cubic
normalSiC
grows at temperatures between 1600° and 1775°C. In order to grow hexagonal
normalSiC
, the substrate surface must be polished mechanically and the temperature must be greater than 1725°C.
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