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82 gamma ray bursts were detected between 1978 September 14 and 1980 February 13 by the experiments of the interplanetary network (Prognoz 7, Vanera 11 and 12 SlOtiB experments, Pioneer Venus Orbiter, International Sun-Berth Explorer 3, Helios 2, and Vale). 65 o£ these events have been localized to annuli or error boxes by the the method of arrival time analysis. The distribution oE sources is consistent with isotropy, and there is no statistically convincing evidence for the detection oE more than one burst from any source position. The localizations are compared with those of two previous catalogs.

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Heteroepitaxial single crystalline films of GaP, GaAs, and InAs are grown on Si (100) and (111) substrates by laser vacuum epitaxy (LVE). Photoelectric properties as well as I–U and C–U characteristics and Hall mobilities in the LVE grown AIIIBv–Si heterojunctions are measured. High electron mobility (3000 cm2 V−1 s−1) and high efficiency (21%) are obtained for the InAs–Si heterojunction with a lattice mismatch of the components of about 11%. The band diagrams according to the experimental data are constructed. Carrier transport mechanisms and the specific features of the LVE process are discussed.