Diodes with a resonant tunneling border are studied as possible sources of THz range. The diodes represent planar two-terminal structures containing a conductive channel and an active lateral border. The lateral border is an AlGaAs/GaAs-based double barrier resonant tunneling structure sandwiched between the channel and metal electrode. It electrically connects to an ohmic contact forming the anode. The operating principle of diodes is based on the use of transfer electron effect in the channel and electron transport throw the lateral border that can result in an increase in the oscillation frequency and extension of operating frequency range. The analysis was performed using ensemble Monte Carlo technique. Oscillation efficiency and frequency properties of the diode are determined. The relation between the maximum efficiency at a specific frequency and the magnitude of the applied bias is shown. It is found that the maximum efficiencies for lower operating frequencies correspond to large bias voltages, while ones at high frequencies are obtained for low bias voltages. Thus, it is possible to create a voltage-controlled oscillation source. The influence of a position of RTB and impurity doping on the generation efficiency of the diode has been investigated. The position of the active lateral border closer to the cathode contact results in a decrease in the generation efficiency and the rise in the oscillation frequency is demonstrated. The possibility to obtain generation in the range from 50 to 550 GHz is shown. The maximum oscillation efficiency is close to 10 % and corresponds to 110 GHz.

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