Comments on the Moss Formula BY V. P. GUPTA~) and N. M. R A~D R A An analysis is given of the well-known Moss formula connecting the energy gap to the refractive index of semiconductors. Based on Penn's model for the dielectric function of semiconductors and the treatment of Wemple, the refractive index is related to the energy gap. For small gaps, the relation is shown to reduce to the earlier predicted linear form.Es wird e k e Analyse der gut bekannten 2Ioss-Formel durchgefuhrt, die die Energielucke mit dem Brechungsindex von Halbleitern verknupft. Auf der Grundlage des Pennschen Modells fur die Dielektrizitatsfunktion der Halbleiter und der Behandlungsmethode von Wemple wird der Brechungsindex mit der Energieliicke verknupft. Fur schmale Bandlucken reduziert sich die Beziehung auf die lineare, fruher vorgeschlagene Form.
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