We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted

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We report on the temperature-dependent electrical characteristics of the Au/Pd/n-GaN Schottky diode in the temperature range of 90-410 K. The barrier heights and ideality factors of Schottky diodes were found in the range 0.23 eV and 3.5 at 90 K to 0.97 eV and 1.9 at 410 K, respectively. It was observed that the zero bias barrier height bo decreases and the ideality factor n increases with a decrease in temperature. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. The estimated values of series resistance (R S ) are in the range of 636 at 90 K to 220 at 410 K using Cheung's method. Based on the above observations, the bo , n and R S values are seen to be strongly temperature dependent. The flat-band barrier height bf (T = 0 K) and temperature coefficient α were found to be 0.67 eV and 2.81 × 10 −3 eV K −1 , respectively. Further, the homogeneous barrier height is estimated from the linear relationship between temperature-dependent experimental effective barrier heights and ideality factors and the value is approximately 1.31 eV. The effective Richardson constant is determined to be 20.43 A cm −2 K −2 and is in good agreement with the theoretical value. It is concluded that the temperature-dependent I-V characteristics of the Au/Pd/n-GaN Schottky diode can be successfully explained on the basis of thermionic emission (TE) mechanism with the Gaussian distribution of the barrier heights.

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