The nonlinear processes of the formation of thin films of PbS-CdS system by using chemical bath deposition with a gradual change in the cadmium nitrate content in the reaction mixture...

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In this work has been developed a technology for obtaining nickel-insulator-aluminum structure with 7 nm thick tantalum oxide deposited by atomic-layer deposition. An asymmetric current-voltage characteristic of the structure is obtained, and the heights of potential barriers at the metal-insulator interface are determined. The permittivity of the tantalum oxide film has been determined experimentally in this work.

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