V. S. Voishchev scite author profile

541.183Chemisorption processes significantly influence the surface states of semiconductor films. It is assumed that these processes should also influence electric-current noise generated by the semiconductor structure. We study stationarity and Gaussianity of the resistance fluctuations of semiconductor gas sensors. It is shown that Gaussianity and stationarity of noise are shown as functions of the gas-phase composition and temperature. On this basis, we conclude that it is in principle possible to increase the selectivity of gas sensors by jointly measuring their sensor and noise characteristics.

show abstract

Untitled

Yakovlev

Shaposhnik

Voishchev

et al. 2002

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

V. S. Voishchev

Aromatic polyimides as charge transfer complexes

Spectral and static noise characteristics of semiconductor gas sensors in equiresistance conditions

A Technique for Measuring Low-Frequency Current Noises in Semiconductor Gas Sensors

A study of Gaussianity and stationarity of noise in gas-sensitive SnO2 films

Untitled

Contact Info

Product

Resources

About