The lattice response of a Bi(111) surface upon impulsive femtosecond laser excitation is studied with time-resolved reflection high-energy electron diffraction. We employ a Debye–Waller analysis at large momentum transfer of 9.3 Å −1 ≤ Δ k ≤ 21.8 Å −1 in order to study the lattice excitation dynamics of the Bi surface under conditions of weak optical excitation up to 2 mJ/cm 2 incident pump fluence. The observed time constants τ int of decay of diffraction spot intensity depend on the momentum transfer Δ k and range from 5 to 12 ps. This large variation of τ int is caused by the nonlinearity of the exponential function in the Debye–Waller factor and has to be taken into account for an intensity drop Δ I > 0.2. An analysis of more than 20 diffraction spots with a large variation in Δ k gave a consistent value for the time constant τ T of vibrational excitation of the surface lattice of 12 ± 1 ps independent on the excitation density. We found no evidence for a deviation from an isotropic Debye–Waller effect and conclude that the primary laser excitation leads to thermal lattice excitation, i.e., heating of the Bi surface.

The thermal transport properties of crystalline nanostructures on Si were studied by ultra-fast surface sensitive time-resolved electron diffraction. Self-organized growth of epitaxial Ge hut, dome, and relaxed clusters was achieved by in-situ deposition of 8 monolayers of Ge on Si(001) at 550 °C under UHV conditions. The thermal response of the three different cluster types subsequent to impulsive heating by fs laser pulses was determined through the Debye-Waller effect. Time resolved spot profile analysis and life-time mapping was employed to distinguish between the thermal response of the different cluster types. While dome clusters are cooling with a time constant of τ = 150 ps, which agrees well with numerical simulations, the smaller hut clusters with a height of 2.3 nm exhibit a cooling time constant of τ = 50 ps, which is a factor of 1.4 slower than expected.

Ultrafast high energy electron diffraction in reflection geometry is employed to study the structural dynamics of self-organized Germanium hut-, dome-, and relaxed clusters on Si(001) upon femtosecond laser excitation. Utilizing the difference in size and strain state the response of hut- and dome clusters can be distinguished by a transient spot profile analysis. Surface diffraction from {105}-type facets provide exclusive information on hut clusters. A pixel-by-pixel analysis of the dynamics of the entire diffraction pattern gives time constants of 40, 160, and 390 ps, which are assigned to the cooling time constants for hut-, dome-, and relaxed clusters.

Heat transfer through heterointerfaces is intrinsically hampered by a thermal boundary resistance originating from the discontinuity of the elastic properties. Here, we show that with shrinking dimensions the heat flow from an ultrathin epitaxial film through atomically flat interfaces into a single crystalline substrate is significantly reduced due to violation of Boltzmann equipartition theorem in the angular phonon phase space. For films thinner than the phonons mean free path, we find phonons trapped in the film by total internal reflection, thus suppressing heat transfer. Repopulation of those phonon states, which can escape the film through the interface by transmission and refraction, becomes the bottleneck for cooling. The resulting nonequipartition in the angular phonon phase space slows down the cooling by more than a factor of 2 compared to films governed by phonons diffuse scattering. These allow tailoring of the thermal interface conductance via manipulation of the interface.

The thermal transport properties of self-organized Ge nanostructures on Si were studied by means of ultrafast surface sensitive time-resolved electron diffraction. The thermal boundary resistance was determined from the temperature response of the Ge nanostructures upon impulsive heating by fs-laser pulses. The transient temperature was determined through the Debye-Waller effect. Epitaxial growth of Ge hut and dome clusters was achieved by in-situ deposition of 8 monolayers of Ge on Si(001) at 550 °C under ultra-high vacuum conditions. Time-resolved spot profile analysis of different orders of diffraction spots was used to distinguish between the thermal response of hut and dome clusters. Dome clusters of 6 nm height and 50 nm width cool with a time constant of 150 ps t = which agrees well with numerical simulations calculated in the framework of the diffuse mismatch model. The much smaller hut clusters with a height of 2.3 nm and width of 23 nm exhibit a cooling time of 55 ps t = , which is a factor of 2 slower than predicted by theory.