The identification of the capture mechanism of charge c a r r i e r s by centers with attractive Coulomb potential proceeding from the temperature dependence of the recombination coefficient only sometimes is ambiguous. Fig. 1 shows the temperature dependence of the capture coefficient of holes a) for defects with the Ec -0.20 eV level in T-irradiated 6oCo Sb-doped Ge obtained from measurements of the steady-state photomagnetoelectric effect (PME) /l/. This dependence was analyzed within the framework of two models, i. e. cascades involving the longwave acoustic phonon /2, 3/ and optical phonon emission /4/.In the f i r s t c a s e the temperature dependence of the recombination coefficient is described by the power law P r ( T ) -T n . The experimental value of r as a function of 1 0 /T was processed ac-P cording to (1) and (2) by the least squares method using a computer. The results obtained are presented by the solid lines T 1) 5.6xlO T-4'1 (curve 1 ) and f = 3.26 T satisfactory agreement with the experimental data. 2 -1.5 P exp(0.03/kT) (curve 2 ) in Fig. 1. These curves are in P Additional information for a more accurate estimation of recombination models may be obtained by investigating the r dependence upon the uniaxial p r e s s u r e P /5, 6/. We investigated the PME voltage with p r e s s u r e in irradiated n-type germanium at 90 K when the lifetime of excess holes was P 1 ) 220080 Minsk, USSR.9 physica (bJ