Anomalous advection-diffusion in two-dimensional semiconductor systems with coexisting energetic and structural disorder is described in the framework of a generalized model of multiple trapping on a comb-like structure. The basic equations of the model contain fractional-order derivatives. To validate the model, we compare analytical solutions with results of a Monte Carlo simulation of phonon-assisted tunneling in two-dimensional patterns of a porous nanoparticle agglomerate and a phase-separated bulk heterojunction. To elucidate the role of directed percolation, we calculate transient current curves of the time-of-flight experiment and the evolution of the mean squared displacement averaged over medium realizations. The variations of the anomalous advection-diffusion parameters as functions of electric field intensity, levels of energetic, and structural disorder are presented.

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