Intermolecular energy transfer processes typically involve an exothermic transfer of energy from a donor site to a molecule with a substantially lower-energy excited state (trap). Here, we demonstrate that an endothermic energy transfer from a molecular organic host (donor) to an organometallic phosphor (trap) can lead to highly efficient blue electroluminescence. This demonstration of endothermic transfer employs iridium(III)bis(4,6-di-fluorophenyl)-pyridinato-N,C2′)picolinate as the phosphor. Due to the comparable energy of the phosphor triplet state relative to that of the 4,4′-N,N′-dicarbazole-biphenyl conductive host molecule into which it is doped, the rapid exothermic transfer of energy from phosphor to host, and subsequent slow endothermic transfer from host back to phosphor, is clearly observed. Using this unique triplet energy transfer process, we force emission from the higher-energy, blue triplet state of the phosphor (peak wavelength of 470 nm), obtaining a very high maximum organic light-emitting device external quantum efficiency of (5.7±0.3)% and a luminous power efficiency of (6.3±0.3)lm/W.

Efficient white electrophosphorescence has been achieved with a single emissive dopant. The dopant in these white organic light emitting diodes (WOLEDs) emits simultaneously from monomer and aggregate states, leading to a broad spectrum and high quality white emission. The dopant molecules are based on a series of platinum(II) [2-(4,6-difluorophenyl)pyridinato-N,C 2 0 ] b-diketonates. All of the dopant complexes described herein have identical photophysics in dilute solution with structured blue monomer emission (l max ¼ 468, 500, 540 nm). A broad orange aggregate emission (l max % 580 nm) is also observed, when doped into OLED host materials. The intensity of the orange band increases relative to the blue monomer emission, as the doping level is increased. The ratio of monomer to aggregate emission can be controlled by the doping concentration, the degree of steric bulk on the dopant and by the choice of the host material. A doping concentration for which the monomer and excimer bands are approximately equal gives an emission spectrum closest to standard white illumination sources. WOLEDs have been fabricated with doped CBP and mCP luminescent layers (CBP ¼ N,N 0-dicarbazolyl-4,4 0-biphenyl, mCP ¼ N,N 0-dicarbazolyl-3,5-benzene). The best efficiencies and color stabilities were achieved when an electron/exciton blocking layer (EBL) is inserted into the structure, between the hole transporting layer and doped CBP or mCP layer. The material used for an EBL in these devices was fac-tris(1-phenylpyrazolato-N,C 2 0)iridium(III). The EBL material effectively prevents electrons and excitons from passing through the emissive layer into the hole transporting NPD layer. CBP based devices gave a peak external quantum efficiency of 3.3 AE 0.3% (7.3 AE 0.7 lm W À1) at 1 cd m À2 , and 2.3 AE 0.2% (5.2 AE 0.3 lm W À1) at 500 cd m À2. mCP based devices gave a peak external quantum efficiency of 6.4% (12.2 lm W À1 , 17.0 cd A À1), CIE coordinates of 0.36, 0.44 and a CRI of 67 at 1 cd m À2 (CIE ¼ Commission Internationale de l'Eclairage, CRI ¼ color rendering index). The efficiency of the mCP based device drops to 4.3 AE 0.5% (8.1 AE 0.6 lm W À1 , 11.3 cd A À1) at 500 cd m À2 , however, the CIE coordinates and CRI remain unchanged.

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Four different 1,8-naphthalimide derivatives were examined in phosphorescent organic light emitting diodes (OLEDs), i.e., 1,8-naphthalimide, N-phenyl-1,8-naphthalimide, N-2,6-dibromophenyl-1,8-naphthalimide (niBr), and bis-N,N-1,8-naphthalimide. Photoluminescence from all four naphthalimides have violet-blue fluorescence and phosphorescent bands between 550 and 650 nm (visible at 77 K). While all four compounds gave good glassy films when doped with a phosphorescent dopant, only the niBr films remained glassy for extended periods. OLED studies focused on niBr, with two different architectures. One OLED structure (type 1) had the niBr layer as a doped luminescent layer and an undoped niBr layer to act as a hole-blocking layer. The alternate structure (type 2) utilizes a doped CBP layer as the luminescent layer and the niBr layer is used as a hole-blocking layer only (CBP = 4,4'-N,N'-dicarbazolylbiphenyl). Type 1 and 2 OLEDs were prepared with green, yellow, and red emissive phosphorescent dopants (Irppy, btIr, and btpIr, respectively). The dopants were organometallic Ir complexes, previously shown to give highly efficient OLEDs. Of the three dopants, the btpIr-based OLEDs showed the best device performance in both structures (peak efficiencies for type 2: 3.2% and 2.3 lum/W at 6.3 V; type 1: 1.7% and 1.3 lm/W at 6.1 V). The green and yellow dopants gave very similar performance in both type 1 and 2 devices (peak efficiencies are 0.2-0.3%), which were significantly poorer than the btpIr-based OLEDs. The emission spectrum of the btIr- and btpIr-based devices (type 1 and 2) are the same as the solution photoluminescence spectrum of the dopant alone, while the Irppy device gives a broad red emission line (lambda(max) = 640 nm). The red Irppy.niBr emission line is assigned to an Irppy.niBr exciplex. The type 2 Irppy-based device gave a voltage-dependent spectrum, with the red emission observed at low bias (4-8 V), switching over to strong green emission as the bias was raised. All other devices showed bias-independent spectra. Estimates of HOMO, LUMO, and excited-state energies (dopant, niBr, and exciplex) were used to explain the observed spectral properties of these devices. btpIr-based devices emit efficiently from isolated dopant states (external efficiencies = 3.2 %, 2.3 lum/W). Irppy-based devices emit only from exciplex states, with low efficiency (external efficiency = 0.3%). btIr.niBr films have very similar energies for the dopant, exciplex, and niBr triplet states, such that relaxation can go through any of these states, leading to low device efficiency (external efficiency = 0.4%). High device efficiency is achieved only when dopant emission is the dominant pathway for relaxation, since exciplex and niBr triplet states give either weak or no electroluminescence.