For the purpose of investigating the thermophysical characteristics of porous silicon (por-Si) photopyroelectric and photoacoustic studies have been performed. The main thermal parameters of por-Si, namely the volume heat capacity C , thermal conductivity KT, thermal diffusivity aT = KT/CT and effusivity = (KT CT)I/3: thermal contrast factor, coefficients of thermal wave reflection and transmission at the boundary por-Si layer -Si-substrate and also for LiNb03-Si-substrate and LiNb03-por-Si-substrate have been evaluated. Efticiency of placing the pyroactive or bolometric sensitive elements of thermal detectors of radiation on the por-Si layer (with a relative low value of bT) on Si-substrate under operation at low frequencies of flux modulation for radiation fluxes of low power has been shown.

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