In this paper, a nonlinear model of a commercial 10-W laterally diffused metal oxide semiconductor (LDMOS) transistor for FM transmitters is identified. It is based on high-frequency small-signal measurements for the identification of both the parasitic network and the strictly nonlinear dynamic effects, whereas low-frequency large-signal measurements are exploited for the description of the dynamic I/V characteristics of the device above the cut-off of low-frequency dispersion. A validation of the proposed model is provided by using time-domain nonlinear measurements carried out at 40MHz and 100 MHz

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