No abstract

Surface and cross-section relief evolution of ferroelectric epitaxial (Ba,Sr)Ti03 films rf-sputtered on (001) MgO crystal cleavage surfaces versus the oxygen worKing gas pressure P and substrate temperature T were studied. Specific features of both three-dimensional and two-dimensional epitaxy mechanisms corresponding to various deposition conditions were revealed. Difference between low and high P-T-value 3D epitaxy was established. the deposition of films with mirror-smooth surfaces and perfect interfaces is shown to be possible.