Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001) Abstract. We have studied the low temperature charge carriers mobility in bulk single crystals of InAs-and InP-rich InAs-InP solid solutions irradiated with maximum integral flux 2·10 18 n/cm 2 of fast neutrons. Influence of minor component small addition in InAs-InP solid solutions has been revealed. There are also presented data of radiation defects thermal stability.
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