In this work ReNx films were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN3, instead of ReN2, as stated on previous works. The ReN3 compound fits in the Ama2 (40) orthorhombic space group, and due to the existence of N3 anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing.

A proposal for the implementation of single-qubit quantum gates based on a third order nonlinear process in integrated quantum circuits is presented.

Laser ablation of a high purity (99.7%) target was used to deposit Fe on a single crystal sapphire substrate. The crystalline structure of the deposit was determined by X‐ray diffraction (XRD). A change in the crystal structure of the deposit as a function of substrate temperature is reported. This change is related to the magnetic properties of the film. The Fe films were quantitatively analyzed in situ by X‐ray Photoemission Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) in order to determine the thickness of the layer and the mode of growth. Results show that the growth mechanism of Fe on sapphire may correspond to a layer by layer model. A carbon film was deposited on top of the Fe film in order to prevent Fe oxidation when exposed to the ambient. The thickness of this carbon layer was determined to be less than 4 nm.

No abstract

Structure Determination and Electronic Structure of Cu3Au0.5N. -Thin films of Cu 3 Au 0.5 N are prepared by reactive d.c. magnetron sputtering using Cu 3 Au as sputter targets in N2 atmosphere and corning glass slides as the substrate. The structure is established by Rietveld and ab initio methods (cubic, space group Fm3m) with a composition close to Cu3Au0.5N. Relative to the Cu3N structure, the Cu atoms occupy the faces, Au the half corners, and N the centers with notable deficiencies in the Au sublattice. The compound is dominated by Cu-Au and Cu-N interactions, however, no Au-N interactions are observed. The material is a narrow-gap semiconductor with a positive hall coefficient that could be used for IR detection. -(SOTO*, G.; PONCE, I.; MORENO, M. G.; YUBERO, F.; DE LA CRUZ, W.; J. Alloys Compd. 594 (2014) 48-51, http://dx.