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Silicon high-power devices are commonly bonded to Mo electrodes using Al films. Bonding stress will inevitably be introduced into the Si substrate by such a process. In this work, the infrared (IR) photoelasticity (PE) method was employed to measure the stress distribution in the Si substrates induced by high temperature bonding process of Si/Al/Mo structures commonly used in the production of silicon thyristors. It is demonstrated that quantitative information on both the directions and magnitudes of the stress can be obtained. The dependence of the magnitude of the stress on the geometrical parameters of the structure has also been studied. The experimental results are shown to agree well with the calculated results derived from a theory of interlaminar stresses in composites.

Abstract. allyl isothiocyanate (aiTc) is a constituent of cruciferous vegetables that exhibits antitumor activity. in this study, aiTc was shown to inhibit the proliferation of human metastatic colorectal adenocarcinoma SW620 cells in vitro by inducing cell cycle arrest at the G 2 /M phase. The signaling pathway of aiTc action involved the down-regulation of the pivotal cdc25B and cdc25c protein phosphatases in the treated cells. Quantitative real-time Pcr of aiTc-treated SW620 cells revealed a time-dependent down-regulation of cdc25B and cdc25c mrna levels, which resulted in a decrease in the expression levels of these two proteins. upon prolonged exposure, aiTc induced caspase-mediated apoptosis in SW620 cells. The apoptotic process was evidenced by the activation of initiator caspases (-8 and -9) and effector caspases (-3 and -7), and the cleavage of poly(adP-ribose) polymerase (ParP). The antitumor activity of aiTc was further demonstrated in a SW620 xenograft in vivo. Taken together, the results suggest that aiTc is a potential candidate for future research in chemoprevention and chemotherapy.

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