No abstract

A doubly ionizable acceptor (binding energies of EA = 34.5 meV, EC = 102 meV), which is responsible for the hole concentration in undoped GaSb, is identified by photoluminescence experiments at 2 K. Growth experiments, using nonstoichiometric melts, show that this acceptor is connected with a lack of antimony in the crystals. Experimental photoluminescence data, concerning the free exciton recombination at 810 meV and an emission line at 795.5 meV (possibly a bound exciton) as well as new phonon satellites, are presented. Finally, photoconductance measurements at the same samples give further information about excitons in GaSb.

No abstract

No abstract

No abstract