This paper analyzes the characteristics of four kinds of possible channels in UHF RFID communication system, and makes a deep analysis on additive white Gaussian noise channel and binary symmetric channel. At the same time, it sets up the ASK modulation and demodulation simulation models of those two kinds of channels, summarizing the relationship between the bit error rate and the variety of signal to noise ratio of those two kinds of system. Finally, it concludes the optimal parameter of transmission process in the RFID system in experiments.
The structure, carrier concentration and low temperature magnetoresistance of Tantalum-doped Tin oxide thin films prepared by RF magnetron sputtering method have been investigated. Hall coefficient is negative at all measuring temperatures, which confirms the n-type characteristic of the films with metallic characteristic. The low temperature magnetoresistance measurement show negative magnetoresistance at all measured temperatures from 2 to 30 K. However, weak-localization theories can not explain the behavior of the negative magnetoresistance of our samples. We fitted the magnetoresistance data of the samples with semiempirical expression that takes into account the third order sd exchange Hamiltonians. The theory and experiment are in excellent agreement. This strongly suggests that the magnetoresistance in SnO2: Ta film originates from the scattering of conduction electrons due to localized magnetic moments.
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