A &actid aggregation behavior in amorphous silicon nitride (Si,N,) films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition is reported. The fractal structure and dimension of 1.45 obtained by experiment and computer simulation are all in excellent agreement with the result predicted by the cluster-cluster-aggregation model. Theforming of &actid structure is related to the change of discharge mode between ring plasma and bulk plasma.

A Deterministic affine quadratic optimal control problem is considered. Due to the nature of the problem, optimal controls exist under some very mild conditions. Further, it is shown that under some assumptions, the value function is differentiable and therefore satisfies the corresponding HamiltonJacobi-Bellman equation in the classical sense. Moreover, the so-called quasi-Riccati equation is derived and any optimal control admits a state feedback representation.

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