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Obesity is closely associated with numerous adipogenic regulatory factors, including coding and non-coding genes. Long noncoding RNAs (lncRNAs) play a major role in adipogenesis. However, differential expression profiles of lncRNAs in inguinal white adipose tissue (iWAT) between wild-type (WT) and ob/ob mice, as well as their roles in adipogenesis, are not well understood. Here, a total of 2809 lncRNAs were detected in the iWAT of WT and ob/ob mice by RNA-Sequencing (RNA-Seq), including 248 novel lncRNAs. Of them, 46 lncRNAs were expressed differentially in WT and ob/ob mice and were enriched in adipogenesis signaling pathways as determined by KEGG enrichment analysis, including the PI3K/AKT/mTOR and cytokine–cytokine receptor interaction signaling pathways. Furthermore, we focused on one novel lncRNA, which we named lnc-ORA (obesity-related lncRNA), which had a seven-fold higher expression in ob/ob mice than in WT mice. Knockdown of lnc-ORA inhibited preadipocyte proliferation by decreasing the mRNA and protein expression levels of cell cycle markers. Interestingly, lnc-ORA knockdown inhibited adipocyte differentiation by regulating the PI3K/AKT/mTOR signaling pathway. In summary, these findings contribute to a better understanding of adipogenesis in relation to lncRNAs and provide novel potential therapeutic targets for obesity-related metabolic diseases.

High-performance selector devices are essential for emerging nonvolatile memories to implement high-density memory storage and large-scale neuromorphic computing. Device uniformity is one of the key challenges which limit the practical applications of threshold switching selectors. Here, high-uniformity threshold switching HfO 2-based selectors are fabricated by using e-beam lithography to pattern controllable Ag nanodots (NDs) with high order and uniform size in the cross-point region. The selectors exhibit excellent bidirectional threshold switching performance, including low leakage current (<1 pA), high on/off ratio (>10 8), high endurance (>10 8 cycles), and fast switching speed (≈75 ns). The patterned Ag NDs in the selector help control the number of Ag atoms diffusing into HfO 2 and confine the positions to form reproducible filaments. According to the statistical analysis, the Ag NDs selectors show much smaller cycle-to-cycle and device-to-device variations (C V < 10%) compared to control samples with nonpatterned Ag thin film. Furthermore, when integrating the Ag NDs selector with resistive switching memory in one-selector-one-resistor (1S1R) structure, the reduced selector variation helps significantly reduce the bit error rate in 1S1R crossbar array. The high-uniformity Ag NDs selectors offer great potential in the fabrication of large-scale 1S1R crossbar arrays for future memory and neuromorphic computing applications.