No abstract

The leakage current is suppressed on 3-D structural fin-like channels of FinFET as the sizes of devices get substantially shrunk. The devices with channel width/length (0.12 m/ 0.10 m) are focused on and the baseline device is taken to be 15KeV phosphorous ions (the precursor PH 3 ) for N-well Vt implant and heavily doped poly-silicon for the gate. One is thus intrigued in what if the Vt implant energy is changed to 20KeV or the gate poly-silicon is fully replaced with cobalt silicide. (