Articles you may be interested inStudy of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy Improved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates Growth of InSb epilayers and quantum wells on Ge(001) substrates by molecular beam epitaxy Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxyThe molecular beam epitaxy of InSb/Si structures was accomplished using group IIa fluoride buffer layers. InSb growth was initiated by opening the In and Sb shutters simultaneously at substrate temperatures between 300°C and 400°C, producing In-terminated InSb͑111͒-A surfaces on CaF 2 /Si͑111͒ substrates. Reflection high-energy electron diffraction, electron channeling, and high resolution x-ray diffraction measurements indicated that the InSb layers were of good crystalline quality. Electron mobilities at room temperature were as high as 65 000 cm 2 /V s for an 8-m-thick InSb layer grown on CaF 2 /Si͑111͒. On CaF 2 /Si͑001͒ substrates, the InSb layers grew in the ͑111͒ orientation with two domains 90°apart. These InSb layers and ones grown on BaF 2 /CaF 2 /Si͑111͒ substrates exhibited inferior electrical and structural properties compared to structures grown on CaF 2 /Si͑111͒ substrates.

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Three types of structures were fabricated using molecular beam epitaxy. High-resolution x-ray diffraction measurements demonstrated the high structural quality of InSb/AlxIn1−xSb superlattices grown on InSb and GaAs substrates. Hall effect data revealed the effect of substrate temperature on autocompensation in InSb δ-doped with Si. Two-dimensional electron systems with a high mobility were realized in InSb quantum wells with AlxIn1−xSb barriers δ-doped with Si.