This paper presents an experimental study on the evaluation of bridging law for a z-pin. The relationship between the z-pin bridging force and its displacement was measured by z-pin pullout tests. The tests were carried out using three types of samples with: single small pin; 3×3 small-pins (three columns? three rows) and 3×3 big-pins. For 3×3 small-pins samples, a typical pullout curve with initial bonding, debonding and frictional sliding was obtained. A high peak value of the debonding force was reached before z-pin debonding started. After debonding was initiated, the pull-out force dropped rapidly to a lower value, the pins were then pulled out steadily against friction. However, for samples with 3x3 big-pins, it was difficult to discern the peak debonding force. The major results of this study are expected to provide a better physical understanding of the mechanics and mechanisms of z-pin bridging, aside from an efficient and accurate methodology to measure the crack-bridging law.
Some highly ordered compounds of graphene oxide (GO), e.g., the so-called clamped and unzipped GO, are shown to have piezoelectric responses via first-principles density functional calculations. By applying an electric field perpendicular to the GO basal plane, the largest value of in-plane strain and strain piezoelectric coefficient, d 31 are found to be 0.12% and 0.24 pm/V, respectively, which are comparable with those of some advanced piezoelectric materials. An in-depth molecular structural analysis reveals that deformation of the oxygen doping regions in the clamped GO dominates its overall strain output, whereas deformation of the regions without oxygen dopant in the unzipped GO determines its overall piezoelectric strain. This understanding explains the observed dependence of d 31 on oxygen doping rate, i.e., higher oxygen concentration giving rise to a larger d 31 in the clamped GO whereas leading to a reduced d 31 in the unzipped GO. As the thinnest two-dimensional piezoelectric materials, GO has a great potential for a wide range of MEMS/NEMS actuators and sensors. *
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