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A highly integrated SiGe BiCMOS PA is presented that enables the emerging high throughput 802.11ac WLAN applications. The PA has two stages for the g-band and three stages for the a-band PA, and integrates matching circuitry, out of band rejection filters, power detectors, and bias controls in a 1.5 x 1.6 mm chip. The gband PA achieves 28 dB gain with 2% EVM at 18 dBm and 3% at 19.5 dBm output power. The a-band PA achieves 32 dB gain with 2% EVM at 18 dBm and 3% EVM at 19 dBm output power. The design is verified meeting not only the regulatory out-of-band emission requirements but also the linearity requirement of the emerging 256 QAM 802.11ac standard.Index Terms -WLAN 802.11ac high throughput power amplifier, dual-band PA, dual-band front-end module.

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Abslroct -A compact 5 x 6 x 1.4 mm3 2.4 GHz Wireless LAN (WLAN) front-end module (FEM) is presented. The FEM features low power consumpiion of 145 mA for 18 dBm output with 3% EVM at 54Mbps transmissions, < -170 dBm/Hz noise emission up to 2 GHz, and high out-of-band interference suppressions, able to support a multi-radio handset with simultaneous operations. The FEM has a 30 dB in-band gain, >24 dB transmitheceive (TIR) isolation under 1O:l mismatch, an integrated regulator, and a temperature compensated power detector. All these unique features provide an easiest integration of a WLAN radio into a multiradio handset.Index Terms -WLAN in cell phones, WLAN front-end module, WLAN power amplifier, WLAN T/R switch design,