Lattice matched III-V/Ge solar cells are mainstream for Concentrator PhotoVoltaics (CPV). Having both contacts on the back side could increase efficiency thanks to reduced shading and would provide an alternative to wirebonding, shingling and MIMs as interconnections methods. In this paper, we present the first demonstration of back side contacted lattice matched III-V on Ge solar cell (InGaP/(In)GaAs/Ge). A specific process was developed to fabricate solar cells with a VOC of 2,38 V and a JSC of 9,9 mA/cm². This result is a proof of concept and further developments should increase cell performance.

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