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A novel position-sensitive detector (PSD) based on the metal–oxide–semiconductor (MOS) structure, which is simply fabricated by an n-type Si substrate, a thin native SiO2 layer and an Au film, is reported in this work. This detector shows a large lateral photovoltage (LPV) with high sensitivity and good linearity. Furthermore, the LPV of this structure greatly depends on the incident angle of the light, suggesting some extra potential for the development of new types of waveguide-like devices.