We demonstrate an approach for the synthesis of SnO2 transparent conductive films with low square resistance and high transmittance over the visible and NIR regions via doping of molybdenum and tungsten.

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A new OLEDoS pixel circuit is proposed for high resolution micro-displays with improved image quality. The data voltage range is extended by using two coupling capacitors to raise the voltage at the source electrode of the driving transistor. Furthermore, the image quality is improved by a compensation scheme of the threshold voltage variation of the driving transistor. The simulations on the basis of CSMC 0.25 μm CMOS model are used to verify the performance of the proposed pixel circuit. It is shown that the data voltage of the proposed pixel circuit ranges from 1.5 V to 3.05 V, which is 2.5 times of that of the conventional 2T1C pixel circuit. The emission current error is decreased to -2.6% ~ 2.6% with ±5 mV threshold voltage variation of the driving transistor for the proposed circuit.

An a-IGZO TFTs integrated gate driver with programmable output waveform for AMOLED display is proposed by shared input shift registers and output stages of multiple clock-follower structure. The driver provides not only multiple scan and control signals for internal compensation, but also extended scan pulses for external compensation.

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