Highly intergrown mordenite membranes were rapidly prepared on seeded aluminum supports by microwaveassisted synthesis. Both the thicknesses of the zeolite layer and the sizes of the zeolite crystals of the mordenite membranes were highly dependent on the synthesis time. With a SiO 2 :0.08Al 2 O 3 :0.2Na 2 O:0.1NaF:35H 2 O precursor synthesis gel, a compact and 0.75 μm thick mordenite crystal layer was successfully prepared on the aluminum support at 170 °C for 3 h. The as-synthesized mordenite membrane exhibited excellent water perm-selectivity and long-term stability for dehydration of alcohol/water, acetic acid/water, and acetic acid/ethanol/water/ethyl ester mixtures by pervaporation. For dehydration of 90 wt % acetic acid/water solution, the corresponding flux and separation factor (water over acetic acid) of the membrane remained at 0.44 kg•m −2 •h −1 and 2300, respectively, at 75 °C even after 59 days of immersion.

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Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.

Two-inch Ga2O3 films with ( 201)-orientation are grown on 𝑐-sapphire at 850-1050 ∘ C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure 𝛽-Ga2O3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in 𝛽-Ga2O3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 eV.

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